Semiconductor device manufacturing: process – Chemical etching – Vapor phase etching
Reexamination Certificate
2006-10-31
2006-10-31
Zarneke, David A. (Department: 2891)
Semiconductor device manufacturing: process
Chemical etching
Vapor phase etching
C257SE21270
Reexamination Certificate
active
07129180
ABSTRACT:
A masking structure having multiple layers is formed. The masking structure includes an amorphous carbon layer and a cap layer formed over the amorphous carbon layer. The amorphous carbon layer includes transparent amorphous carbon. The cap layer includes non-oxide materials. The masking structure may be used as a mask in an etching process during fabrication of semiconductor devices.
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Li Weimin
Sandhu Gurtej S.
Yin Zhiping
Micro)n Technology, Inc.
Schwegman Lundberg Woessner & Kluth P.A.
Zarneke David A.
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