Masking structure having multiple layers including an...

Semiconductor device manufacturing: process – Chemical etching – Vapor phase etching

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C257SE21270

Reexamination Certificate

active

07129180

ABSTRACT:
A masking structure having multiple layers is formed. The masking structure includes an amorphous carbon layer and a cap layer formed over the amorphous carbon layer. The amorphous carbon layer includes transparent amorphous carbon. The cap layer includes non-oxide materials. The masking structure may be used as a mask in an etching process during fabrication of semiconductor devices.

REFERENCES:
patent: 570316 (1896-10-01), Le Blois et al.
patent: H566 (1989-01-01), Nyaiesh et al.
patent: 4849642 (1989-07-01), Katsumi
patent: 4971853 (1990-11-01), Chaiken et al.
patent: 4975144 (1990-12-01), Yamazaki et al.
patent: 5096791 (1992-03-01), Yahalom
patent: 5198263 (1993-03-01), Stafford et al.
patent: 5324365 (1994-06-01), Niwa
patent: 5346729 (1994-09-01), Pitts et al.
patent: 5358880 (1994-10-01), Lebby et al.
patent: 5369040 (1994-11-01), Halvis et al.
patent: 5420043 (1995-05-01), Niwa
patent: 5431800 (1995-07-01), Kirchhoff
patent: 5437961 (1995-08-01), Yano et al.
patent: 5470661 (1995-11-01), Bailey et al.
patent: 5496752 (1996-03-01), Nasu et al.
patent: 5514885 (1996-05-01), Myrick
patent: 5578501 (1996-11-01), Niwa
patent: 5589307 (1996-12-01), Takeuchi
patent: 5629532 (1997-05-01), Myrick
patent: 5669644 (1997-09-01), Kaihotsu et al.
patent: 5723029 (1998-03-01), Shimoyama
patent: 5733713 (1998-03-01), Yano et al.
patent: 5750316 (1998-05-01), Kawamura et al.
patent: 5800878 (1998-09-01), Yao
patent: 5830332 (1998-11-01), Babich et al.
patent: 5998100 (1999-12-01), Azuma
patent: 6035803 (2000-03-01), Robles et al.
patent: 6107734 (2000-08-01), Tanaka et al.
patent: 6128868 (2000-10-01), Ohtsuka et al.
patent: 6136160 (2000-10-01), Hrkut et al.
patent: 6140570 (2000-10-01), Kariya
patent: 6140652 (2000-10-01), Shlepr et al.
patent: 6211065 (2001-04-01), Xi et al.
patent: 6221535 (2001-04-01), Cox et al.
patent: 6291334 (2001-09-01), Somekh
patent: 6300631 (2001-10-01), Shofner
patent: 6313896 (2001-11-01), Samant et al.
patent: 6316329 (2001-11-01), Hirota et al.
patent: 6323119 (2001-11-01), Xi et al.
patent: 6331380 (2001-12-01), Ye et al.
patent: 6346184 (2002-02-01), Sano et al.
patent: 6350997 (2002-02-01), Saeki
patent: 6394109 (2002-05-01), Somekh
patent: 6420095 (2002-07-01), Kawamura et al.
patent: 6423384 (2002-07-01), Khazeni et al.
patent: 6427703 (2002-08-01), Somekh
patent: 6444899 (2002-09-01), Kubota et al.
patent: 6447891 (2002-09-01), Veerasamy et al.
patent: 6461950 (2002-10-01), Yin et al.
patent: 6483127 (2002-11-01), Saeki
patent: 6508911 (2003-01-01), Han et al.
patent: 6541397 (2003-04-01), Bencher
patent: 6551941 (2003-04-01), Yang et al.
patent: 6566757 (2003-05-01), Banerjee
patent: 6573030 (2003-06-01), Fairbairn et al.
patent: 6583481 (2003-06-01), Itoh
patent: 6613603 (2003-09-01), Sano
patent: 6621535 (2003-09-01), Fukada
patent: 6624064 (2003-09-01), Sahin et al.
patent: 6627532 (2003-09-01), Gaillard
patent: 6649469 (2003-11-01), Wilson
patent: 6653735 (2003-11-01), Yang et al.
patent: 6668752 (2003-12-01), Yao
patent: 6780753 (2004-08-01), Latchford et al.
patent: 6784119 (2004-08-01), Xia et al.
patent: 6795636 (2004-09-01), Cronk et al.
patent: 6803313 (2004-10-01), Gao et al.
patent: 6821571 (2004-11-01), Huang
patent: 6825114 (2004-11-01), Fisher et al.
patent: 6841341 (2005-01-01), Fairbairn et al.
patent: 6852647 (2005-02-01), Bencher
patent: 6864556 (2005-03-01), You et al.
patent: 6875664 (2005-04-01), Huang et al.
patent: 6875687 (2005-04-01), Weidman
patent: 6884733 (2005-04-01), Dakshina-Murthy et al.
patent: 2001/0006837 (2001-07-01), Kwon et al.
patent: 2001/0011730 (2001-08-01), Saeki
patent: 2001/0017153 (2001-08-01), Kubota et al.
patent: 2002/0001778 (2002-01-01), Latchford et al.
patent: 2002/0003239 (2002-01-01), Ramdani et al.
patent: 2002/0086547 (2002-07-01), Mui et al.
patent: 2002/0100696 (2002-08-01), Sano et al.
patent: 2003/0198814 (2003-10-01), Khieu et al.
patent: 2003/0207207 (2003-11-01), Li
patent: 2004/0092098 (2004-05-01), Sudijono et al.
patent: 2005/0056835 (2005-03-01), Yin
patent: 2005/0059262 (2005-03-01), Yin
patent: 2006/0008741 (2006-01-01), Yin et al.
patent: 2006/0022247 (2006-02-01), Yin et al.
patent: 0531232 (1993-03-01), None
patent: 1154468 (2001-11-01), None
patent: 58-204534 (1983-11-01), None
patent: WO-03038875 (2003-05-01), None
patent: WO-2004/012246 (2004-02-01), None
patent: WO-2005/034216 (2005-04-01), None
patent: WO-2005/034229 (2005-04-01), None
Pelton, Matthew , et al., “The optical absorption edge of diamond-like carbon: A quantum well model”,Journal of Applied Physics, 83(2), (Jan. 15, 1998),1029-35.
“International Search Report and the Written Opinion of the International Searching Authority, or the Declaration for Application No. PCT/US2004/029209, date mailed Dec. 22, 2004”, 15 pages.
Liu, W. , et al., “Generating Sub-30nm Poly-Silicon Gates Using PECVD Amorphous Carbon as Hardmask and Anti-Reflective Coating”,Proceedings of the SPIE, 5040, Optical Microlithography XVI, Yen, A, (ed.),(Feb. 25, 2003),841-848.
Shieh, J. -., et al., “Characteristics of Fluorinated Amorphous Carbon Films and Implementation of 0.15 micron Cu/a-C:F Damascene Interconnection”,Journal of Vacuum Science and Technology, 19, (May, 2001),780-787.
Chen, Z. Y., et al., “Optical constants of tetrahedral amorphous carbon films in the infrared region and at a wavelength of 633nm”,Journal of Applied Physics, 87(9), (May 1, 2000), 4268-4273.
He, X., et al., “Characterization and Optical Properties of Diamondlike Carbon Prepared by Electron Cyclotron Resonance Plasma”,Journal of Materials Research,14(3), (Mar. 1999), 1055-1061.
Lide, D. R., et al., “Physical Constants of Organic Compounds”,CRC Handbook of Chemistry and Physics, Internet Version 2005, http:/www.hbcpnetbase.com,(2005), 12-157.
Zhou, X. T., et al., “Deposition and properties of a-C:H films on polymethyl methacrylate by electron cyclotron resonance microwave plasma chemical vapor deposition method”,Surface and Coatings Technology, 123(2-3),(Jan. 24, 2000),273-277.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Masking structure having multiple layers including an... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Masking structure having multiple layers including an..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Masking structure having multiple layers including an... will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-3635647

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.