Masking scheme for silicon dioxide mesa formation

Details Masking scheme for silicon dioxide mesa formation Masking scheme for silicon dioxide mesa formation

1989-04-14

1990-08-21

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437 41, 437913, 437 63, 148DIG53, 148DIG82, 357 237, H01L 2100, H01L 2102, H01L 21265, H01L 21316

Patent

active

049506188

ABSTRACT:
An improved masking stack (63) comprises a pad oxide (58), polysilicon (60) and nitride (62). After forming a photoresist pattern (64) over the stack (63), an anisotropic etch is performed to remove the nitride (62) and a portion of the polysilicon (60) not covered by the pattern (64). Another etch is performed to remove the remaining polysilicon (60) to leave at least a portion of the pad oxide (58). A boron implant (66) is conducted to form implant areas (68 and 70) within the unmasked silicon active device layer (56). A portion of the implant areas (68 and 70) is masked with nitride (72), and the unmasked silicon layer (56) is then etched. The masking stack (63) and the nitride (72) is removed and unprotected silicon layer (56) and implant areas (68 and 70) are covered with an oxide forming the silicon dioxide mesa (78).

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