Masking process for simultaneously patterning separate regions

Details Masking process for simultaneously patterning separate regions Masking process for simultaneously patterning separate regions

2006-03-02

2010-11-30

Le, Thao X (Department: 2894)

Semiconductor device manufacturing: process

Making regenerative-type switching device

Having field effect structure

C257S216000, C257SE21190

Reexamination Certificate

active

07842558

ABSTRACT:
According to another embodiment of the present invention, a method comprises patterning a first plurality of semiconductor structures in an array portion of a semiconductor substrate using a first photolithographic mask. The method further comprises patterning a second plurality of semiconductor structures over a logic portion of a semiconductor substrate using a second photolithographic mask. The method further comprises patterning a sacrificial layer over the first plurality of semiconductor structures using the second photolithographic mask. The sacrificial layer is patterned simultaneously with the second plurality of semiconductor structures.

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