Masking process for forming self-aligned dual wells or self-alig

Details Masking process for forming self-aligned dual wells or self-alig Masking process for forming self-aligned dual wells or self-alig

1998-12-30

2000-07-18

Powell, William

Semiconductor device manufacturing: process

Chemical etching

Combined with the removal of material by nonchemical means

438232, 438527, 438551, 438735, 438738, 438757, H01L 2100

Patent

active

060907150

ABSTRACT:
A masking process for forming first and second ion-doped regions on a substrate of a semiconductor device. An oxide layer and a first nitride layer are formed on the substrate in order. The first nitride layer is etched using a photolithography process to form a first predetermined pattern which exposes portions of the oxide layer. The exposed portions of the oxide layer are then etched using the first predetermined pattern as an etching mask, until portions of the substrate corresponding to the first ion-doped regions are exposed. Next, first ions are doped into the exposed portions of the substrate using the first predetermined pattern as a doping mask. The first predetermined pattern is removed. A second nitride layer is then formed over the substrate and the patterned oxide layer. Portions of the second nitride layer are removed to reveal the top of the patterned oxide layer, forming a second predetermined pattern on the substrate. The patterned oxide layer is etched, using the second predetermined pattern as an etching mask, until portions of the substrate corresponding to the second ion-doped regions are exposed. Next, second ions are doped into the exposed portions of the substrate using the second predetermined pattern as a doping mask.

REFERENCES:
patent: 3847687 (1974-11-01), Davidsohn et al.
patent: 4144101 (1979-03-01), Rideout
patent: 4435896 (1984-03-01), Parrillo et al.
patent: 4558508 (1985-12-01), Kinney et al.
patent: 5856003 (1999-01-01), Chiu

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