Masking methods for semiconductor materials

Details Masking methods for semiconductor materials Masking methods for semiconductor materials

1997-01-03

1998-12-08

Pianalto, Bernard

Coating processes

Direct application of electrical, magnetic, wave, or...

Polymerization of coating utilizing direct application of...

427225, 4272552, 4272553, 4272554, 427259, 427261, 427282, 4274432, 427583, 427585, 437225, C08J 704

Patent

active

058466096

ABSTRACT:
A method of forming a mask including providing a fluid from a group including oxygen based, nitrogen based, or carbon based fluids, introducing a substrate of semiconductor material into the fluid, and growing a film with thickness in a range of 10-20 .ANG. on a surface by converting the fluid adjacent the surface into a reactive species. The reactive species is created by directing light having a wavelength at the absorption peak of the fluid so as to convert the fluid into the reactive species. The surface of the substrate reacts with the reactive species to form the film.

REFERENCES:
patent: 4472459 (1984-09-01), Fisher
patent: 5451425 (1995-09-01), Vig
patent: 5556590 (1996-09-01), Hull

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