Masking methods during semiconductor device fabrication

Details Masking methods during semiconductor device fabrication Masking methods during semiconductor device fabrication

1995-08-07

1998-03-24

Garrett, Felisa

Single-crystal, oriented-crystal, and epitaxy growth processes;

Forming from vapor or gaseous state

With decomposition of a precursor

117 95, 438689, C30B 2304

Patent

active

057307989

ABSTRACT:
A method of masking semiconductor substrates during fabrication of semiconductor devices includes positioning an oxide mask on the substrate so as to define a growth area and an unmasked portion the surface. A dense oxide layer is grown on the unmasked portion and the oxide mask is removed to expose the growth area. The substrate is introduced into a growth chamber and heated to approximately 580.degree.-600.degree. C. to desorb any native oxide in the exposed growth area. Crystalline material is selectively grown on the exposed growth area and the substrate is heated to approximately 640.degree. C. under high arsenic flux to desorb the dense oxide layer, without removing the substrate from the chamber.

REFERENCES:
patent: 3895155 (1975-07-01), Shukuri et al.
patent: 4717681 (1988-01-01), Curran

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