Masking methods during semiconductor device fabrication

Details Masking methods during semiconductor device fabrication Masking methods during semiconductor device fabrication

1996-01-05

1998-05-26

Beck, Shrive

Coating processes

Nonuniform coating

Deforming the base or coating or removing a portion of the...

427282, 427399, 427553, 427558, 427583, 427586, B05D 132, B05D 300, C08J 718

Patent

active

057561540

ABSTRACT:
A method of masking surfaces during fabrication of semiconductor devices is disclosed, which includes providing a substrate, and in a preferred embodiment a silicon substrate. The surface is hydrogen terminated (or hydrogenated) and a metal mask is positioned on the surface so as to define a growth area and an unmasked portion on the surface. Ozone is generated at the surface, at least in the unmasked area, by exposing the surface to a light having a wavelength approximately 185 nm (an oxygen absorbing peak), so as to grow an oxide film on the unmasked portion of the surface. The metal mask is removed and the oxide film then serves as a mask for further operations and can be easily removed in situ by heating.

REFERENCES:
patent: 4575919 (1986-03-01), Logan et al.
patent: 4702936 (1987-10-01), Maeda et al.
patent: 5298456 (1994-03-01), Unozawa
patent: 5308788 (1994-05-01), Fitch et al.
patent: 5412246 (1995-05-01), Dobuzinsky et al.
patent: 5451425 (1995-09-01), Vig
"Resistless high resolution optical lithography on silicon "by N. Kramer, M. Niesten and C. Schonenberger from Appl. Phys. Lett.67 (20), 13 Nov. 1995.

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