Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor
Patent
1996-03-01
1998-01-20
Garrett, Felisa
Single-crystal, oriented-crystal, and epitaxy growth processes;
Forming from vapor or gaseous state
With decomposition of a precursor
117 97, C30B 2502
Patent
active
057097445
ABSTRACT:
A method of masking surfaces during fabrication of semiconductor devices is disclosed, which includes providing a gallium arsenide substrate. The surface can include a layer of native oxide or not, and a metal mask is positioned adjacent the surface so as to define a growth area and an unmasked portion on the surface. Ultraviolet light is directed at the unmasked area, by exposing the surface to a bright light, so as to grow an oxide film on the unmasked portion of the surface. The metal mask is removed and the oxide film then serves as a mask for further operations and can be easily removed in situ by heating. If native oxide is included, it can be removed in situ by heating the substrate to a lower temperature.
REFERENCES:
patent: 4717681 (1988-01-01), Curran
A.J. Spring Thorpe et al., "Measurement of GaAs Surface Oxide Desorption Temperatures", Appl. Phys. Lett 50 (2), 12 Jan. 1987, 1987 American Inst. of Physics, pp. 77-72.
S. Ingrey, et al., "An X-Ray Photoelectron Spectroscopy Study on Ozone Treated GaAs Surfaces", J. Vac. Sci. Technol, A4 (3) May/Jun. 1986, 1986 Am. Vac. Soc., pp. 984-988.
Garrett Felisa
Motorola
Parsons Eugene A.
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