Fishing – trapping – and vermin destroying
Patent
1994-03-10
1995-09-19
Chaudhuri, Olik
Fishing, trapping, and vermin destroying
437 32, 437 34, 437192, H01L 2144, H01L 2148
Patent
active
054515467
ABSTRACT:
A masking method for use in a silicide formation process is disclosed herein which prevents an oxide etching solution from tunneling under a photoresist masking layer and damaging oxide spacers not intended to be etched. This process may be used during the formation of a bipolar or MOS transistor formed in an isolated silicon island. A mask opening used to etch exposed oxide spacer portions is made to not expose any parasitic oxide spacers formed along an edge of the isolated silicon island. In this way, an oxide etch solution is prevented from tunneling along the parasitic oxide spacer and reaching any intersecting oxide spacers not intended to be etched. The desired oxide spacers will thus be intact to properly isolate silicide portions formed over exposed silicon and polysilicon surfaces.
REFERENCES:
patent: 4764480 (1988-08-01), Vora
patent: 5139961 (1992-08-01), Solheim et al.
patent: 5298440 (1994-03-01), Jerome et al.
Blair Christopher S.
Grubisich Michael J.
Chaudhuri Olik
National Semiconductor Corporation
Nelson H. Donald
Ogonowsky Brian D.
Roddy Richard J.
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