Masked radiant anneal diffusion method

Details Masked radiant anneal diffusion method Masked radiant anneal diffusion method

1994-10-31

1995-10-31

Chaudhari, Chandra

Fishing, trapping, and vermin destroying

437174, 437247, 148DIG105, H01L 3118, H01L 21324, H01L 21326

Patent

active

054628822

ABSTRACT:
Only the areas of the CdTe/HgCdTe interface of a FPA detector circuit which is coupled by an epoxy to a silicon-based integrated circuit that require interdiffusing are heated to a sufficiently high temperature or have photons of light impinging thereon for a sufficient time to cause interdiffusion of the two layers by the travel of tellurium into the HgCdTe and the travel of mercury into the CdTe. The vast majority of the wafer is masked with an aluminum thin film to greatly reduce heat gain or photon transmission. An advantage of the process in accordance with the present invention is that only a very small fraction of the HgCdTe/epoxy/silicon-based integrated circuit wafer receives incoming energy during interdiffusion whereby problems caused by the differences in coefficient of thermal expansion between silicon and HgCdTe at the epoxy interface are minimized.

REFERENCES:
patent: 4568397 (1986-02-01), Hoke et al.
patent: 4766084 (1988-08-01), Bory et al.
patent: 5192695 (1993-03-01), Wang et al.

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