Masked laser anneal during fabrication of backside...

Details Masked laser anneal during fabrication of backside... Masked laser anneal during fabrication of backside...

2011-03-08

2011-03-08

Richards, N Drew (Department: 2895)

Semiconductor device manufacturing: process

Making device or circuit responsive to nonelectrical signal

Responsive to electromagnetic radiation

C257S292000, C438S075000, C438S799000, C438S949000

Reexamination Certificate

active

07901974

ABSTRACT:
A technique for fabricating an array of imaging pixels includes fabricating front side components on a front side of the array. After fabricating the front side components, a dopant layer is implanted on a backside of the array. A mask is formed over the dopant layer to selectively expose portions of the dopant layer. Next, the exposed portions of the dopant layer are laser annealed. Alternatively, the mask may be disposed over the backside prior to the formation of the dopant layer and the dopants implanted through the exposed portions and subsequently laser annealed.

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