Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified configuration
Reexamination Certificate
2005-06-14
2005-06-14
Smoot, Stephen W. (Department: 2813)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified configuration
C257SE23174, C428S550000, C430S005000
Reexamination Certificate
active
06906423
ABSTRACT:
A mask used for exposing a porous substrate to form a first region and a second region, the first region being filled with a conductive material piercing through the entire thickness of the porous substrate to constitute an interfacial conductive portion, the second region being filled with a conductive material not piercing the entire thickness of the porous substrate to constitute a non-interfacial conductive portion. The mask includes a first light-transmitting region for exposing the first region, and a second light-transmitting region for exposing the second region, said second light-transmitting region including an aggregation of fine patterns of which an average aperture ratio is not more than 50% of an average aperture ratio of the first light-transmitting region and a size of said fine patterns of the second light-transmitting region being in the range of 0.1 μm to 10 μm.
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Asakawa Koji
Hiraoka Toshiro
Hotta Yasuyuki
Matake Shigeru
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