Mask structures for X-ray lithography

Radiant energy – Radiation controlling means

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29579, 96 362, 250514, B01J 1700, G02B 500, G21F 504

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active

040371115

ABSTRACT:
It has been observed that the deposition and patterning of metallic layers on a supported X-ray-transparent film to form a mask for X-ray lithography introduce stresses in the mask structure. In turn these stresses cause distortions of the film and of the high-resolution X-ray-absorptive pattern formed thereon. Various techniques, including new metallization systems, are proposed for minimizing the establishment of stresses in such structures.

REFERENCES:
patent: 3892973 (1975-07-01), Coquin et al.
patent: 3925677 (1975-12-01), Fraser
patent: 3958263 (1976-05-01), Panish et al.
"Spurious Effects Caused by the Continuous Radiation and Ejected Electrons in X-ray Lithography," Jour. Vac. Sci. Technol., vol. 12, No. 6, Nov./Dec. 1975, Maldonado, pp. 1329-1331.

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