Mask structure for X-ray lithography and method for manufacturin

Details Mask structure for X-ray lithography and method for manufacturin Mask structure for X-ray lithography and method for manufacturin

1982-06-17

1984-05-29

Kittle, John E.

Radiation imagery chemistry: process, composition, or product th

Radiation modifying product or process of making

Radiation mask

430313, 430314, 430323, 430324, 430966, 430967, 204 181, G03F 900

Patent

active

044515448

ABSTRACT:
The invention provides a mask structure for X-ray lithography, having a mask substrate of an X-ray transmitting material, a mask pattern of an X-ray absorbing material which is formed on the surface of the mask substrate or therein, a support ring for supporting the rear periphery of the mask substrate, and a lattice-shaped metal film embedded in a lattice-shaped slit in the mask substrate. The mask structure with a large area has a dimensional stability.

REFERENCES:
patent: 4058432 (0000-01-01), Schuster-Woldan
patent: 4169230 (0000-01-01), Bohlen
patent: 4260670 (1981-04-01), Burns
Journal of Vacuum Science & Technology, vol. 16, No. 6, 1959, (1979); D. Maydan et al.; "Boron Nitride Mask Structure for X-ray Lithography".
Solid State Technology, Jul. 1972, D. L. Spears and I. Smith, "X-Ray Lithography A New High Resolution Replication Process".
8th International Conference on Electron and Ion Beam Science & Technology, May 1978, Seattle, H. Bohlen et al, pp. 420-430.
International Conference on Microlithography, Jun. 1977, Paris, B. Lischke et al, pp. 163-166.

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