Mask structure for x-ray lithography

Details Mask structure for x-ray lithography Mask structure for x-ray lithography

1979-05-23

1981-02-24

Smith, Alfred E.

Radiant energy

Radiation controlling means

250492A, 29579, B01J 1700, G02B 500, G21F 504

Patent

active

042530296

ABSTRACT:
A mask substrate for use in an x-ray lithographic system comprises a boron nitride member (32, FIG. 2) coated with a polyimide layer (20) whose thickness is approximately the same as that of the boron nitride member. The substrate is mechanically strong and both optically and x-ray transparent. Mask patterns formed on the substrate are characterized by low distortion and a low defect density.

REFERENCES:
patent: 3743842 (1973-07-01), Smith et al.
patent: 3873824 (1975-03-01), Bean et al.
patent: 3892973 (1975-07-01), Coquin et al.
patent: 4037111 (1977-07-01), Coquin et al.
patent: 4152601 (1979-05-01), Kadota et al.
patent: 4170512 (1979-10-01), Flonders et al.
patent: 4171489 (1979-10-01), Adams et al.

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