Radiation imagery chemistry: process – composition – or product th – Radiation modifying product or process of making – Radiation mask
Reexamination Certificate
2005-10-11
2005-10-11
Young, Christopher G. (Department: 1756)
Radiation imagery chemistry: process, composition, or product th
Radiation modifying product or process of making
Radiation mask
C430S030000, C430S296000, C430S311000, C430S942000, C378S035000
Reexamination Certificate
active
06953643
ABSTRACT:
Mask Shaping using temporal and spatial Coherence for Ultra High Resolution Lithographic imaging and printing refers to methods and apparatus that can be adopted to print near-ideal images of basic shapes when the shapes are asymmetrical. Ultra High Resolution Lithography refers to proximity printing of clear mask fetures when they are demagnified by bias. In this lithography, optical components, including lenses and mirrors, are not used between the mask and wafer. When a clear mask feature is asymmetric and the mask-wafer gap is set so that the Critical Condition is maintained for the shortest print dimension, then undesirable features typically appear in other longer dimensions consistent with Fresnel diffraction. The undesirable featurs impede illumination uniformity for controlled printing in exposed areas. Such features, including Bright Spots and Ripple, are counteracted by the Mask Shaping that is designed to optimize printing with temporal and spatial coherence near the Critical Condition. Even with broad band illumination, ultra high resolution is not lost. On the contrary, with Mask Shaping near the Critical Condition, the undesirable features occurring parallel to the longer dimensions, are normally reduced or eliminated. Near-ideal shapes can be printed. With Mask Shaping for temporal and spatial coherence, production parameters, including resolution, exposure time, and illumination band width can be enhanced, traded, and optimized.
REFERENCES:
patent: 6194104 (2001-02-01), Hsu
patent: 6383697 (2002-05-01), Vladimirsky et al.
O. W.Otto et al.Automated Optical Proximity Correction—a Rules Based Approach Optical/Laser Microlithography VII Proc. SPIE (2197) 1994 pp. 278-293.
S.Shiori et al. Fast Optical Proximity Correction—Analytical Method Optical/Laser Microlithography VIII Proc. SPIE (2440) 1995 pp 261-269.
A.J.Bourdillon et al Proximity Correction simulations in Ultra High Resolution Lithography Journal of Physics D: Applied Physics(34) 2001 pp 3209-3213.
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