Mask repair using multiple exposures

Details Mask repair using multiple exposures Mask repair using multiple exposures

2006-02-28

2006-02-28

Mohamedulla, Saleha R. (Department: 1756)

Radiation imagery chemistry: process, composition, or product th

Radiation modifying product or process of making

Radiation mask

C430S312000, C430S313000, C430S316000, C430S030000, C257S006000

Reexamination Certificate

active

07005215

ABSTRACT:
A mask fabrication and repair technique including multiple exposures is provided. In this multiple exposure technique, the first exposure can define the critical dimensions (CDs) of the shapes for the mask. A subsequent exposure can eliminate isolated defects and significantly reduce the size of defects proximate to the desired shapes on the mask. Because similar processes (i.e. forming, exposing, and developing a photoresist layer) are used for creating and repairing the mask, certain repair-related defects, such as phase and transmission defects, can be minimized. Wafer repair can also be performed using the same multiple exposure technique.

REFERENCES:
patent: 4231811 (1980-11-01), Somekh et al.
patent: 5922497 (1999-07-01), Pierrat
patent: 5981110 (1999-11-01), George et al.
patent: 6096458 (2000-08-01), Hibbs
patent: WO 02/29491 (2002-04-01), None

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