Mask repair

Details Mask repair Mask repair

1992-03-12

1993-12-28

Bowers, Jr., Charles L.

Radiation imagery chemistry: process, composition, or product th

Radiation modifying product or process of making

Radiation mask

430321, 427140, 427524, 2504922, G03F 900

Patent

active

052738493

ABSTRACT:
Repair of transparent errors in masks utilized for lithographic processes in the manufacture of devices is accomplished by a particularly expedient procedure. In this procedure a metal ion beam such as a gallium ion beam is directed to the region that is to be repaired. An organic gas, including a material having an aromatic ring with an unsaturated substituent, is introduced into this region. The interaction of the gas with the ion beam produces an opaque adherent deposit. The resolution for this deposition is extremely good and is suitable for extremely fine design rules, e.g., 1 .mu.m and below.

REFERENCES:
patent: 4460436 (1984-07-01), Hiraoka
patent: 4698236 (1987-10-01), Kellogg et al.
patent: 4902530 (1990-02-01), Yasaka et al.
patent: 4930439 (1990-06-01), Sato et al.
patent: 4950498 (1990-08-01), Kaito
patent: 4958074 (1990-09-01), Wolf et al.
L. Harriott, Proceedings of SPIE, 773 (1987).
D. J. Elliott, Integrated Circuit Fabrication Technology, McGraw-Hill, New York, 1982.
H. C. Kaufman, W. B. Thompson, and G. J. Dunn, Proceedings of SPIE, International Society of Optical Engineering, 632, 60 (1986).
M. Yamamoto, M. Sato, H. Kyogoku, K. Aita, Y. Nakugawa, A. Yasaka, R. Takusawa, O. Hattori, Proceedings of SPIE, Int'l. Society of Optical Engineering, 632, 97 (1986).

Affiliated with

Also associated with

Rating

Mask repair does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Mask repair, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Mask repair will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1541872