Mask read only memory (ROM) for storing multi-value data

Details Mask read only memory (ROM) for storing multi-value data Mask read only memory (ROM) for storing multi-value data

1993-04-05

1995-01-31

LaRoche, Eugene R.

Static information storage and retrieval

Read only systems

Semiconductive

365182, 257390, G11C 1700

Patent

active

053863810

ABSTRACT:
A mask ROM for storing multi-value data has a memory cell comprising a primary conductive region formed by a first conductive type semiconductor, a source region formed in the primary conductive region by a second conductive type semiconductor, a drain region formed in the primary conductive region by the second conductive type semiconductor, a channel region adjacently formed with the source region and the drain region, a gate insulation layer formed on the channel region, and a gate electrode formed on the gate insulation layer, wherein the channel region or the gate electrode is divided into a plurality of parts, each divided part having a different layer thickness from the other or a different transmissivity for ion injection, so as to form a ROM.

REFERENCES:
patent: 5128738 (1992-07-01), Lee
patent: 5192872 (1993-03-01), Lee
patent: 5214303 (1993-05-01), Aoki

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