Mask pattern forming method capable of correcting errors by prox

Details Mask pattern forming method capable of correcting errors by prox Mask pattern forming method capable of correcting errors by prox

1997-08-27

1999-02-16

Young, Christopher G.

Radiation imagery chemistry: process, composition, or product th

Including control feature responsive to a test or measurement

430296, G03F 900, G03C 500

Patent

active

058718745

ABSTRACT:
In a method for forming a mask pattern which is exposed with light or electrons, a resist layer being exposed with light or electrons passed through said mask pattern to form a resist pattern, a light or electron beam intensity on the resist layer is calculated. Then, a deviation of a logarithmic value of the light intensity is calculated, and a ratio of a logarithmic value of a dissolving speed of the resist layer to a logarithmic value of the exposure is calculated. Then, a value is calculated by a.sup.1/b. I where a is the deviation, b is the ratio, I is the intensity. Then, a size of the resist pattern is calculated by setting a contour having a predetermined value in a distribution of the value, and a difference between the mask pattern and the size of the resist pattern is calculated. Finally, the mask pattern is corrected in accordance with the difference.

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