Mask pattern forming method and patterning method using the...

Details Mask pattern forming method and patterning method using the... Mask pattern forming method and patterning method using the...

2006-10-17

2006-10-17

Young, Christopher G. (Department: 1756)

Radiation imagery chemistry: process, composition, or product th

Radiation modifying product or process of making

Radiation mask

C430S312000, C430S322000

Reexamination Certificate

active

07122282

ABSTRACT:
A method of forming a mask pattern includes a step of laminating a first resist layer on a base layer, a step of exposing the first resist layer using a first pattern with a pattern of at least one via hole, a step of developing the first resist layer exposed to remove a part of the first resist layer, the part corresponding to an area of the at least one via hole, a step of laminating a second resist layer on the first resist layer and on the base layer in the area of the at least one via hole, a step of exposing the second resist layer using a second pattern, and a step of developing the second resist layer exposed and the first resist layer to remove a part of the second resist layer and all of the first resist layer so as to form the mask pattern made of the second resist layer.

REFERENCES:
patent: 5366848 (1994-11-01), Thane et al.
patent: 6303272 (2001-10-01), Furukawa et al.
patent: 0 341 843 (1989-11-01), None
patent: 10-312063 (1998-11-01), None

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