Radiation imagery chemistry: process – composition – or product th – Radiation modifying product or process of making – Radiation mask
Reexamination Certificate
2011-05-17
2011-05-17
Rosasco, Stephen (Department: 1721)
Radiation imagery chemistry: process, composition, or product th
Radiation modifying product or process of making
Radiation mask
C716S053000, C716S055000
Reexamination Certificate
active
07943274
ABSTRACT:
A mask pattern correction method is provided. The method comprises the following steps. An original layout, which has a plurality of device patterns, is provided. Then, a simulation process is performed on the device patterns to correspondingly form a plurality of simulated patterns. Thereafter, the simulated patterns are analyzed to select a plurality of unsaturated patterns from the simulated patterns. Finally, the device patterns in the original layout corresponding to the unsaturated patterns respectively are rotated.
REFERENCES:
patent: 6622297 (2003-09-01), Uno et al.
patent: 2002/0151140 (2002-10-01), Nakasugi
patent: 2005/0166112 (2005-07-01), Okada et al.
patent: 2006/0057475 (2006-03-01), Liebmann et al.
patent: 2006/0078805 (2006-04-01), Hansen
Kuo Hui-Fang
Yang Yu-Shiang
Fraser Stewart A
Hsu Winston
Margo Scott
Rosasco Stephen
United Microelectronics Corp.
LandOfFree
Mask pattern correction and layout method does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Mask pattern correction and layout method, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Mask pattern correction and layout method will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2635674