Mask overhang reduction or elimination after substrate etch

Details Mask overhang reduction or elimination after substrate etch Mask overhang reduction or elimination after substrate etch

2009-05-15

2011-10-25

Sarkar, Asok (Department: 2891)

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

C257SE21257, C257SE21549, C257SE21564, C257SE21578, C438S424000, C438S435000, C438S624000, C438S701000, C438S734000, C438S978000

Reexamination Certificate

active

08043973

ABSTRACT:
A method of forming IC devices includes providing a substrate and forming a patterned masking layer including at least one masked region having at least one masking layer, and a feature region bounded by the masking layer. Etching forms an etched feature in the substrate, wherein undercutting during the etching forms at least one mask overhang region over a surface portion of the etched feature that is recessed relative to an outer edge of the masking layer. A pullback etch process exclusive of any additional patterning step laterally etches the masking layer. The conditions for the pullback etch retain at least a portion of the masking layer and reduce a length of the mask overhang region by at least 50%, or eliminate the mask overhang region entirely. The etched feature is then filled after the pullback etch process to form a filled etched feature.

REFERENCES:
patent: 5308415 (1994-05-01), Chou

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