Mask or wafer writing technique

Details Mask or wafer writing technique Mask or wafer writing technique

1991-06-28

1994-04-26

McCamish, Marion E.

Radiation imagery chemistry: process, composition, or product th

Radiation modifying product or process of making

Radiation mask

430311, 430319, 430320, G03F 900

Patent

active

053065840

ABSTRACT:
A photolithographic mask or a directly written wafer has a pattern formed on a substrate 320. A grid pattern 316 and a layer of resist material 322 are formed on the substrate 320. The grid pattern 316 may be either above or beneath the resist material 320. The grid pattern 316 is scanned, by an e-beam or optical beam for example, without substantially reacting the resist layer 320 to obtain information on the location of the grid pattern 316. Portions of the resist material 320 are then exposed to form a device pattern. The device pattern is determined in part from the information and is also formed over the grid pattern 316. Other systems and methods are also disclosed.

REFERENCES:
patent: 4780382 (1988-10-01), Stengl et al.
Physcia Scripta. vol. 41, pp. 13-20, 1990 "X-ray/VUV Transmission Gratings for Astrophysical and Laboratory Applications"; M. L. Schattenberg et al.
"A new approach to high fidelity e-beam and ion-beam lithography based on an in situ global-fiducial grid", H. I. Smith et al., J. Vac. Sci. Technol. B., vol. 9, No. 6, Nov./Dec. 1991, pp. 2992-2995.

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