Radiant energy – Irradiation of objects or material – Irradiation of semiconductor devices
Reexamination Certificate
2006-06-13
2006-06-13
Mai, Anh D. (Department: 2814)
Radiant energy
Irradiation of objects or material
Irradiation of semiconductor devices
C250S492220, C438S551000, C430S005000, C430S296000
Reexamination Certificate
active
07060996
ABSTRACT:
To provide a mask able to prevent a drop in pattern position accuracy due to the influence of internal stress of a membrane and able to align patterns including complementary divided patterns precisely, a method of producing the same, and a method of producing a semiconductor device. A stencil mask having lattice-shaped struts formed by etching a silicon wafer on four regions of a membrane wherein the lattices are offset from each other in the four regions and all of the struts are connected to other struts or the silicon wafer around the membrane (frame), a method of producing a stencil mask, and a method of producing a semiconductor device.
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International Search Report (English Translation).
Moriya Shigeru
Omori Shinji
Kananen Ronald P.
Kunzer Brian E.
Mai Anh D.
Rader & Fishman & Grauer, PLLC
Sony Corporation
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