Radiation imagery chemistry: process – composition – or product th – Radiation modifying product or process of making – Radiation mask
Reexamination Certificate
2004-11-22
2008-12-02
Huff, Mark F (Department: 1795)
Radiation imagery chemistry: process, composition, or product th
Radiation modifying product or process of making
Radiation mask
C430S030000
Reexamination Certificate
active
07459244
ABSTRACT:
A mask having a mask pattern for properly evaluating pattern line width. A mask pattern including a pattern to be determined and a plurality of surrounding patterns is formed on a mask. Areas with the same line width in the pattern to be determined are located between a pair of surrounding patterns with an aperture rate of 0%, between a pair of surrounding patterns with an aperture rate of 50%, and between a pair of surrounding patterns with an aperture rate of 100%, respectively. These pairs of surrounding patterns with the different aperture rates change the influence of charge-up on the pattern to be determined. Accordingly, the line width of each area in the pattern to be determined is determined, the difference between the line width of two areas is found, and the amount of a determination error caused by the charge-up is calculated. As a result, whether the line width of the pattern is determined with accuracy can be judged and the line width of the pattern can be evaluated properly.
REFERENCES:
patent: 6391501 (2002-05-01), Ohnuma
patent: 6570157 (2003-05-01), Singh et al.
patent: 6982135 (2006-01-01), Chang et al.
patent: 2006/0008709 (2006-01-01), Kushida et al.
patent: 08-288352 (1996-11-01), None
Fujitsu Limited
Huff Mark F
Jelsma Jonathan
Westerman, Hattori, Daniels & Adrian , LLP.
LandOfFree
Mask, method for forming a pattern, and method for... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Mask, method for forming a pattern, and method for..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Mask, method for forming a pattern, and method for... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-4050551