Mask for x-ray pattern delineation

Radiation imagery chemistry: process – composition – or product th – Radiation modifying product or process of making – Radiation mask

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430321, 430324, 378 34, 378 35, G03F 900

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053044371

ABSTRACT:
Fabrication of reflective masks, designed for use with x-ray delineating radiation in the construction of sub-micron devices, is expedited by use of a barrier layer intermediate the multilayer reflector and the absorber layer. The barrier is designed to reduce damage to the multilayer reflector during two stages of fabrication--during initial patterning and during subtractive or additive mask repair. Composition of the barrier is so chosen as to minimize such damage during its removal in baring of the reflector, and also as to have requisite stability in regions retained during mask life.

REFERENCES:
patent: 4906326 (1990-03-01), Amemiya et al.
patent: 5052033 (1991-09-01), Ikeda et al.
L. R. Harriott and M. J. Vasile, "Focused beam induced deposition of opaque carbon films," J. Vac. Sci. Technology, B6 (3), pp. 1035-1038.
L. R. Harriott, "The technology of finely focused ion beams," Nuclear Instruments and Methods in Physics Research, B55, pp. 802-810 (1991).
W. Silfast and O. Wood, "Tenth micron lithography with a 10 Hz 37.2 sodium laser," Microelectronics Engineering, 8, pp. 3-11 (1988).
C. M. Melliar-Smith and C. J. Mogab, "Plasma-Assisted Etching Techniques for Pattern Delineation," Academic Press, Inc., V-2, pp. 497-510 (1978).
A. M. Hawryluk, et al., "Reflection mask technology for x-ray projection lithography," J. Vac. Sci. Technol. B7 (6), pp. 1702-1704.
Troy W. Barbee, Jr., "Multilayers for x-ray optics," SPIE, Applications of Thin-Film Multilayered Structures to Figured X-Ray Optics (1985).
A. Hawryluk and L. Seppala, "Soft x-ray projection lithography using an x-ray reduction camera," J. Vac. Sci. Technol. B6 (6), pp. 2162-2166 (1988).
A. Wagner and J. P. Levin, "Focused Ion Beam Repair of Lithographic Masks," Nuclear Instruments and Methods in Physics Research, B37/38, pp. 224-230.
C. C. Fu, et al., "Elimination of mask-induced defects with vote-taking lithography", SPIE Optical Microlithography V, vol. 633, p. 270 (1986).
H. Kinoshita, K. Kurihara, "Soft x-ray reduction lithography using multilayer mirrors", J. Vac. Sci. Technol., vol. B7 (6), Nov./Dec. (1989).

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