Radiation imagery chemistry: process – composition – or product th – Radiation modifying product or process of making – Radiation mask
Patent
1991-04-01
1992-07-21
Bowers, Jr., Charles L.
Radiation imagery chemistry: process, composition, or product th
Radiation modifying product or process of making
Radiation mask
430 22, 430321, 430966, 378 35, 2504911, G03F 900
Patent
active
051321866
ABSTRACT:
A mask for X-ray lithography includes a transparent thin film (1) of SiC, an X-ray absorbing pattern (2) of Au formed on the surface of the transparent thin film (1) and a support member (3) of Si formed on the back surface of the transparent thin film (1). The support member (3) has an opening (4) for exposing the back surface of the transparent thin film (1). A transparent conductive thin film (5) of In.sub.2 O.sub.3 is formed over the back surfaces of the exposed transparent thin film (1) and the support member (3).
REFERENCES:
patent: 3873824 (1975-03-01), Bean et al.
patent: 3892973 (1975-07-01), Coquin et al.
patent: 4468799 (1984-08-01), Harms et al.
patent: 4595649 (1986-06-01), Ferguson et al.
patent: 4680243 (1987-07-01), Shimkunas
patent: 4939052 (1990-07-01), Nagagawa
patent: 5023156 (1991-06-01), Takeuchi et al.
JP 56-66037, "X-Ray Mask", Tanaka, Japanese Patent Abstract, Jun. 4, 1981.
JP 61-128,251, "Mask for X-Ray Exposure", Chiba, Japanese Patent Abstract, Jun. 16, 1986.
Solid State Technology: "X-Ray Lithography", by R. K. Watts, May 1979, pp. 68-82.
Spie, Submicrom Lithography: "X-Ray Lithography: Fabrication of Masks and Very Large Scale Integrated Devices", by B. B. Triplette et al., vol. 333, 1982, pp. 118-123.
Spie Electron Beam, X-Ray & Ion-Beam Techniques for Sub-Micrometer Lithographies III: "Defect Repair Techniques for X-Ray Masks" by D. K. Atwood et al., vol. 471, 1984, pp. 127-134.
Takeuchi Susumu
Yoshioka Nobuyuki
Bowers Jr. Charles L.
Mitsubishi Denki & Kabushiki Kaisha
Neville Thomas R.
LandOfFree
Mask for X-ray lithography and method of manufacturing the same does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Mask for X-ray lithography and method of manufacturing the same, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Mask for X-ray lithography and method of manufacturing the same will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-842413