Mask for X-ray lithography

Radiation imagery chemistry: process – composition – or product th – Radiation modifying product or process of making – Radiation mask

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

430321, 378 35, 428704, G03F 900

Patent

active

046475176

ABSTRACT:
The invention relates to a mask for X-ray lithography, in particular, for the manufacture of VLSI semiconductor components, which is economical and reliable in its manufacture. The mask should transfer absorber structures down to the submicron range. Lateral mechanical distortions are avoided by a tension-compensated carrier membrane of simultaneously B and Ge doped silicon. This carrier membrane is also optically more transparent than known Si membranes doped only with B, which facilitates optical alignment of the mask.

REFERENCES:
patent: 3742230 (1973-06-01), Spears et al.
patent: 4468799 (1984-08-01), Harms et al.
Wilson et al, Ion Beams with Applications to Ion Implantation, J. Wiley & Sons, New York, 1973.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Mask for X-ray lithography does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Mask for X-ray lithography, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Mask for X-ray lithography will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-1016394

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.