Mask for use in stitching exposure process

Details Mask for use in stitching exposure process Mask for use in stitching exposure process

1997-09-30

1999-07-13

Rosasco, S.

Radiation imagery chemistry: process, composition, or product th

Radiation modifying product or process of making

Radiation mask

G03F 900

Patent

active

059224959

ABSTRACT:
A mask structure used in the lithography process for semiconductors is disclosed. The mask structure comprises upper and lower masks, a light-blocking pattern formed on a region where the upper mask and the lower masks overlap one another, wherein a line width of the light-blocking pattern in the overlapping region is larger than that of in a non-overlapping region or a dummy light-blocking pattern having minute line width is formed between the light-blocking patterns so that the excessive light could not reach to the overlapping region of the upper and the lower masks due to repeated exposure in the stitching exposure process for forming a mask pattern by overlapping the masks in case that a chip size is larger than an exposure area exposed by an exposure equipment.

REFERENCES:
patent: 5260151 (1993-11-01), Berger et al.
patent: 5532090 (1996-07-01), Borodovsky
patent: 5571641 (1996-11-01), Bae

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