Mask for transferring a pattern for use in a semiconductor devic

Details Mask for transferring a pattern for use in a semiconductor devic Mask for transferring a pattern for use in a semiconductor devic

1994-09-26

1997-04-22

Nguyen, Ngoc-Yen

Stock material or miscellaneous articles

All metal or with adjacent metals

Composite; i.e., plural, adjacent, spatially distinct metal...

428652, 428665, 428642, 428630, 148DIG104, H01L 2130

Patent

active

056227876

ABSTRACT:
A mask for transferring a pattern in which durability can be improved and a very fine circuit pattern of a light-shielding film can be formed, and a manufacturing method thereof are obtained. In the mask for transferring a pattern, a silicon monocrystalline film 2, an aluminum monocrystalline film 3 and an aluminum oxide film 4 are formed on a mask substrate 1 so as to have a prescribed pattern feature. Silicon monocrystalline film 2 and aluminum monocrystalline film 3 serve as the light-shielding film. Aluminum oxide film 4 serves as an anti reflection and protection film.

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