Mask for transferring a pattern for use in a semiconductor devic

Radiation imagery chemistry: process – composition – or product th – Radiation modifying product or process of making – Radiation mask

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

430 22, G03F 900

Patent

active

057028494

ABSTRACT:
A mask for transferring a pattern in which durability can be improved and a very fine circuit pattern of a light-shielding film can be formed, and a manufacturing method thereof are obtained. In the mask for transferring a pattern, a silicon monocrystalline film 2, an aluminum monocrystalline film 3 and an aluminum oxide film 4 are formed on a mask substrate 1 so as to have a prescribed pattern feature. Silicon monocrystalline film 2 and aluminum monocrystalline film 3 serve as the light-shielding film. Aluminum oxide film 4 serves as an anti reflection and protection film.

REFERENCES:
patent: 3740280 (1973-06-01), Ronen
patent: 4722878 (1988-02-01), Watakabe et al.
patent: 4981771 (1991-01-01), Mochiji et al.
patent: 5049461 (1991-09-01), Arett et al.
patent: 5115465 (1992-05-01), Kimura et al.
patent: 5154949 (1992-10-01), Shindo et al.
patent: 5181132 (1993-01-01), Shindo et al.
patent: 5233211 (1993-08-01), Hayashi et al.
"Single-Crystal Silicon on a Sapphire Substrate," Manasevit and Simpson, Journal of Applied Physics, vol. 35, No. 4, Apr. 1964, pp. 1349-1351.
"Vapor Phase Epitaxial Growth of MgO.Al.sub.2 O.sub.3," Ihara et al., vol. 129, No. 11 Electrical Properties, Nov. 1982, pp. 2569-2573.
"Epitaxial Growth of Deposited Amorphous Layer by Laser Annealing," Lau et al., Appl. Phys. Lett. 33(2), 15 Jul. 1978, pp. 130-131.
"Ideal Hydrogen Termination of the Si (111) Surface," Higashi et al., Appl. Phys. Lett. 56(7), 12 Feb. 1990, pp. 656-658.
"Mechanism of HF Etching of Silicon Surface: A Theoretical Understanding of Hydrogen Passivation," Trucks et al., vol. 65, No. 4, Physical Review Letters, Jul., 1990, pp. 504-507.
"Proximity Effects," Brodie et al., The Physics of Microfabrication, 1982, pp. 338-339.
"Electron-Beam Lithography," Brodie et al., The Physics of Microfabrication, 1982, pp. 312-320.
Kubaschewski et al., "Oxidation of Metals and Alloys," 2nd ed., QD 171 K8, 1962, pp. 1, 35-38.
English abstract for JP 04-72714 (Mar. 1992).
English abstract for JP 55-158635 (Dec. 1980).
English abstract for JP 55-180604 (Feb. 1980).
"Antireflective MOSI Photomasks," Chiba et al., J. Vac. Sci. Technol. B 10(6), Nov. 1992, pp. 2480-2485.
"High-Resolution Lithography with a Vacuum STM," Marian et al., Ultramicroscopy 42-44 (Mar. 1992), pp. 1309-1316.
"From Molecules to Cells: Imaging Soft Samples with the Atomic Force Microscope," M. Radmacher et al., Science vol. 257, Sep. 25, 1992, pp. 1900-1905.
"Scanning Tunneling Microscope Instrumentation," Kuk et al., Rev. Sci. Instrum. 60(2), Feb. 1989, pp. 165-180.
"Pattern Generation on Semiconductor Surfaces by a Scanning Tunnelling Microscope Operating in Air," Dagata et al., J. Vac. Sci. Technol. B9(2), Mar./Apr. 1991, pp. 1384-1388.
"Area Selective Aluminum Patterning by Atomic Hydrogen Resist," Tsubouchi et al., Extended Abstracts of the 1992 International Confrence on Solid State Devices and Materials, pp. 208-210.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Mask for transferring a pattern for use in a semiconductor devic does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Mask for transferring a pattern for use in a semiconductor devic, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Mask for transferring a pattern for use in a semiconductor devic will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-200967

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.