Mask for the formation of patterns in lacquer layers by means of

Radiation imagery chemistry: process – composition – or product th – Radiation modifying product or process of making – Radiation mask

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350318, 378 35, 430967, G02B 500, G02B 700, G03F 100

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active

045554609

ABSTRACT:
In a mask for X-ray lithography, in which a pattern of a layer corresponding to the structure to be manufactured and consisting of a material opaque to visible light is applied to a thin diaphragm of a material transparent to X-ray radiation, an adjustment with visible radiation, such as laser light, is made possible using a diaphragm consisting of a material opaque to visible light and using adjustment windows of a material transparent to the visible light of the spectrum through the diaphragm.

REFERENCES:
patent: 3742230 (1973-06-01), Spears et al.
patent: 4152601 (1979-05-01), Kadota et al.
patent: 4260670 (1981-04-01), Burns
patent: 4454209 (1984-06-01), Blais

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