Mask for structuring surface areas, and method of making it

Details Mask for structuring surface areas, and method of making it Mask for structuring surface areas, and method of making it

1980-03-03

1982-08-03

Louie, Jr., Won H.

Radiation imagery chemistry: process, composition, or product th

Radiation modifying product or process of making

Radiation mask

156644, 428137, 428596, 2504922, 2505051, 378145, G03C 500

Patent

active

043428177

ABSTRACT:
A mask for structuring surface areas and a method for manufacture thereof. The mask includes at least one metal layer with throughgoing apertures which define the mask pattern and a semiconductor substrate for carrying the metal layer. The semiconductor substrate has throughholes that correspond to the mask pattern. The throughholes in the semiconductor substrate extend from the metal layer-covered surface on the front to at least one tub-shaped recess which extends from the other back surface into the semiconductor substrate. Holes are provided in a surface layer in the semiconductor substrate. The surface layer differs in its doping from the rest of the substrate and the holes which are provided in the surface layer have lateral dimensions larger than the apertures in the metal layer so that the metal layer protrudes over the surface layer.

REFERENCES:
patent: 3742230 (1973-06-01), Spears
patent: 4021276 (1971-05-01), Cho et al.
patent: 4059480 (1977-11-01), Ruh et al.
patent: 4086127 (1978-04-01), Cresswell
patent: 4256532 (1981-03-01), Magdo et al.
Heynick et al., "Projection Electron Lithography Using Aperture Lenses", IEEE Transactions on Electron Devices, vol. ED-22, No. 7, Jul. 1975, pp. 399-409.
Leone et al., "Fabricating Shaped Grid and Aperture Holes", IBM Technical Disclosure Bulletin, vol. 14, No. 2, Jul. 1971, p. 417.

Affiliated with

Also associated with

Rating

Mask for structuring surface areas, and method of making it does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Mask for structuring surface areas, and method of making it, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Mask for structuring surface areas, and method of making it will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1468670