Mask for photolithography

Radiation imagery chemistry: process – composition – or product th – Radiation modifying product or process of making – Radiation mask

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378 35, 36447424, G03F 900

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052427706

ABSTRACT:
An improvement for reducing proximity effects comprised of additional lines, referred to as intensity leveling bars, into the mask pattern. The leveling bars perform the function of adjusting the edge intensity gradients of isolated edges in the mask pattern, to match the edge intensity gradients of densely packed edges. Leveling bars are placed parallel to isolated edges such that intensity gradient leveling occurs on all isolated edges of the mask pattern. In addition, the leveling bars are designed to have a width significantly less than the resolution of the exposure tool. Therefore, leveling bars that are present in the mask pattern produce resist patterns that completely developed away when a nominal exposure energy is utilized during exposure of photoresist.

REFERENCES:
patent: 4895780 (1990-01-01), Nissan-Cohen et al.
Chien, Paul et al.; "Proximity Effects in Submicron Optical Lithography": pp. 35-39, SPIE vol. 772 Optical Microlithography VI (1987).
Rosenbluth, Alan E. et al.; "A Critical Examination of Submicron Optical Lithography Using Simulated Projection Images": pp. 1190-1195, J. Vac. Sci. Technol. B., vol. 1 No. 4, Oct-Dec. 1983.
Nissan-Cohen, Y. et al.; "Variable Proximity Corrections for Submicron Optical Lithographic Masks": pp. 13-14, Proc. 1987 Symp. VLSI Tech. (1987).
Meyerhofer, Dietrich; "Resolution and Proximity Effect in Optical Lithography": pp. 174-187, SPie vol. 922 Optical/Laser Microlithography (1988).
Shamma, Nader et al.; "A Method for Correction of Proximity Effect in Optical Projection Lithography": pp. 145-156, Proc. KTI Interface (1989).
Liu, Albert C. et al.; "A Study of Projected Optical Images for Typical IC Mask Patterns Illuminated by Partially Coherent Light": pp. 1251-1263, IEEE Transations on Electron Devices, vol. ED-30, No. 10, Oct. 1983.
Maxwell, Graeme D.; "An Analysis of the Relevance to Linewidth Control of Various Aerial Image Characteristics": pp. 213-223, SPIE vol. 633 Optical Microlithography V (1986).
Ong, Edith et al.; "Comparison of Proximity Effects in Contrast Enhancement Layer and Bi-layer Resist Processes": pp. 443-448, J. Vac. Sci. Technol. B 5(1), Jan/Feb 1987.
Flanner III, Philip D. et al.; "Two-Dimensional Optical Proximity Effects": pp. 239-244, SPIE vol. 633 Optical Microlithography V (1986).
Dunbrack, Steve K.; "Masks for Sub-0.5 micron Optical Lithography": pp. 2-8, SPIE vol. 922 Optical/Laser Microlithography (1988).
Wolf, T. M. et al.; "Proximity Effects of Lithography and Etching in Submicron Processes": pp. 335-349, Proc. KTI Interface (1989).
White, L. K.; "Contact Hole Imaging in Stepper Lithography", pp. 1-8, SPIE vol. 733 Optical Lithography VI (1987).
Ito et al.; "Submicrometer Pattern Correction for Optical Lithography" pp. 9-17, SPIE vol. 922 Optical/Laser Microlithography (1988).
Starikov, A.; "Use of a Single Size Square Serif for Variable Print Bias Compensation in Microlithography; Method, Design, and Practice", pp. 34-46, SPIE vol. 1088 Optical/Laser Microlithography (1989).

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