Radiation imagery chemistry: process – composition – or product th – Radiation modifying product or process of making – Radiation mask
Patent
1993-04-12
1995-02-14
McCamish, Marion E.
Radiation imagery chemistry: process, composition, or product th
Radiation modifying product or process of making
Radiation mask
430311, 430313, 430320, G03F 900
Patent
active
053894740
ABSTRACT:
A mask for photolithography having a transparent substrate which allows light having a predetermined wavelength to pass therethrough; an opaque pattern provided on said substrate for inhibiting the light from passing therethrough; and a stepped portion provided adjacent to said opaque pattern on said substrate and having an inclined area, said stepped portion being transparent for allowing the light to pass therethrough, which can be used in a photolithographic system in fabrication of semiconductor devices and the like.
REFERENCES:
patent: 3986876 (1976-10-01), Abita
patent: 5045417 (1991-09-01), Okamoto
IEEE Transactions on Electron Devices--vol. ED-29, No. 12, Dec. 1982, New York US pp. 1828-1836; Marc D. Levenson et al: "Improving resolution in photolithography with a phase-shifting mask".
Patent Abstracts of Japan--vol. 6, No. 112 (P-124)(990) 23 Jun. 1982, & JP-A-57 041639 (Fujitsu K.K.) 08 Mar. 1982.
Patent Abstracts of Japan--vol. 6, No. 137 (P-130)(1015) 24 Jul. 1982, & JP-A-57 060335 (Hitachi Seisakusho K.K.) 12 Apr. 1982.
Extended Abstracts, vol. 80-1, May 1980, Princeton, New Jersey pp. 637-638; Qiu Pei-Yong et al: "Fabrication of chrome mask by using an electron beam exposure system".
Patent Abstracts of Japan--vol. 5, No. 42 (P-53)(714) 20 Mar. 1981, & JP-A-55 163539 (Kiyuushiyuu Nippon Denki K.K.) 19 Dec. 1980.
Patent Abstracts of Japan--vol. 6, No. 66 (P-112 27 Apr. 192, & JP-A-57 006849 (Matsushita Electric Ind. Co. Ltd.) 13 Jan. 1982.
Patent Abstracts of Japan--vol. 9, No. 289 (P-405)(2012) 15 Nov. 1985, & JP-A-60 128447 (Fujitsu K.K.) 09 Jul. 1985.
Hasegawa, S.; Microelectronic Engineering Sep. (1989) 127-130 "Mask Contrast Enhancement Using Beveled edge in x-ray lithography".
Fukushima Takashi
Iguchi Katsuji
Tabuchi Hiroki
Chapman Mark A.
McCamish Marion E.
Sharp Kabushiki Kaisha
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