Mask for manufacturing TFT, TFT, and manufacturing thereof

Radiation imagery chemistry: process – composition – or product th – Radiation modifying product or process of making – Radiation mask

Reexamination Certificate

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Reexamination Certificate

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08062811

ABSTRACT:
A mask comprises a channel region half-exposure mask structure, a drain mask structure, and a source mask structure, wherein the channel region half-exposure mask structure comprises a channel region peripheral half-exposure mask structure, which extends from a portion that corresponds to a channel region of the TFT and is outside the portion. According to the present invention, problems such as a connection of the source/drain and a disconnection of the active layer in the channel region can be effectively prevented.

REFERENCES:
patent: 6876428 (2005-04-01), Kwak et al.
patent: 2010/0197086 (2010-08-01), Lim et al.
patent: 1655039 (2005-08-01), None

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