Radiation imagery chemistry: process – composition – or product th – Radiation modifying product or process of making – Radiation mask
Patent
1992-04-30
1993-08-10
Bower, Jr., Charles L.
Radiation imagery chemistry: process, composition, or product th
Radiation modifying product or process of making
Radiation mask
430311, 430313, 156645, 378 35, G03F 900
Patent
active
052347818
ABSTRACT:
A mask for lithographic patterning comprises a base body provided with a through hole passing from a top side to a bottom side thereof, a mask layer provided on the top side of the base body so as to close the through hole, the mask layer being defined by a substantially flat top surface and a substantially flat bottom surface and having a thickness ranging from about 2 .mu.m to about 20 .mu.m, and a plurality of patterned apertures provided on the mask layer at a part closing the through hole.
REFERENCES:
patent: 3713922 (1973-01-01), Lepsetler et al.
patent: 4256532 (1981-03-01), Magdo et al.
patent: 4260670 (1981-04-01), Burns
patent: 4448865 (1984-05-01), Bohlen et al.
patent: 4680243 (1987-07-01), Shimkunas et al.
patent: 4751169 (1988-06-01), Behringer et al.
patent: 4855197 (1989-08-01), Zapka et al.
patent: 4897360 (1990-01-01), Guckel et al.
patent: 5005075 (1991-04-01), Kobayashi et al.
patent: 5051326 (1991-09-01), Celler et al.
Sakamoto Kiichi
Yasuda Hiroshi
Bower, Jr. Charles L.
Fujitsu Limited
Neville Thomas R.
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