Mask for ion, electron or X-ray lithography and method of making

Details Mask for ion, electron or X-ray lithography and method of making Mask for ion, electron or X-ray lithography and method of making

1987-05-01

1989-08-08

Dees, Jose G.

Radiation imagery chemistry: process, composition, or product th

Radiation modifying product or process of making

Radiation mask

430313, 430323, 430966, 156643, 156662, 2504922, 2505051, 378 35, 427 38, G03F 900

Patent

active

048551970

ABSTRACT:
A mask for radiation beam lithography is formed from a semiconductor wafer by thinning a region into a membrane with a hole pattern defining the pattern of the mask. The membrane is doped with a tensile stress-generating material so that minimum doping exists at the periphery of the membrane with the maximum at its center. The difference in doping between the periphery and the center is chosen so that when the mask is irradiated with a given beam current intensity, the membrane is tension-free. To make a mask in the wafer, a hole pattern is formed by etching holes in the membrane or by depositing a layer on the membrane. The wafer is thinned from the opposite surface until the holes in the hole pattern are throughholes or until the desired thickness is reached. The membrane is doped with tensile-stress-generating material using ion implantation or diffusion proportionally to the temperature distribution existing in the membrane during irradiation with exposure beams.

REFERENCES:
patent: 3742230 (1973-06-01), Spears et al.
patent: 4342817 (1982-08-01), Bohlen et al.
patent: 4393127 (1983-07-01), Greschner et al.
patent: 4417946 (1983-11-01), Bohlen et al.
patent: 4448865 (1984-05-01), Bohlen et al.
patent: 4451544 (1984-05-01), Kawabuchi
patent: 4468799 (1984-08-01), Harms et al.
patent: 4589952 (1986-05-01), Behringer et al.
patent: 4640844 (1987-02-01), Neppl et al.
patent: 4647517 (1987-03-01), Hersener et al.
IBM TDB vol. 26, No. 7A, Dec. 1983 "Shadow Projection Mask for X-Ray, Ion and Electron Beam Lithography".
J. Vac. Sci. Techno. B 3(1), Jan./Feb. 1985, pp. 136-139, "Electron Beam Proximity Printing: Complementary-Mask and Level-To-Level Overlay with Accuracy".

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