Mask for electron beam exposure and electron beam drawing method

Details Mask for electron beam exposure and electron beam drawing method Mask for electron beam exposure and electron beam drawing method

1998-04-15

1999-12-07

Westin, Edward P.

Radiant energy

Irradiation of objects or material

Irradiation of semiconductor devices

25049222, 25049223, H01J 3700, G21K 510

Patent

active

059987979

ABSTRACT:
A mask for electron beam exposure has a plurality of holes for drawing contact. These holes have a plurality of sizes that correspond to regions which should be drawn by an electron beam. Among the plurality of holes for drawing contact, one hole is selected according to the designed size. Then, the mask for electron beam exposure is located on the resist film so that the selected hole for drawing contact may be positioned on the contact formation predetermined area of the wafer. Next, the electron beam is applied to the resist film on the contact formation predetermined area of the wafer through the selected hole by irradiating the electron beam from the upper side of the mask. Consequently, the contact pattern is exposed to the resist film.

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