Single-crystal – oriented-crystal – and epitaxy growth processes; – Processes of growth from solid or gel state
Reexamination Certificate
2006-04-25
2006-04-25
Hiteshew, Felisa (Department: 1722)
Single-crystal, oriented-crystal, and epitaxy growth processes;
Processes of growth from solid or gel state
C117S089000, C117S090000, C117S092000, C117S095000, C117S097000
Reexamination Certificate
active
07033434
ABSTRACT:
A method of crystallizing amorphous silicon is used for manufacturing an array substrate having thin film transistors, pixel electrodes and an alignment key. The method includes forming an amorphous silicon layer over a substrate, forming an alignment key in the amorphous silicon layer, preparing a mask including pattern portions and an alignment key pattern, disposing the mask over the substrate having the amorphous silicon layer, wherein the alignment key pattern is aligned with the alignment key, and applying a first shot of a laser beam to in the amorphous silicon layer to form first polycrystalline silicon areas corresponding to the pattern portions of the mask.
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R. S. Sposili, et al. “Single Crystal Si Films Via a Low-Substrate-Temperature Excimer-Laser Crystallization Method”, Mat. Res. Soc. Symp. Proc. vol. 452, ©1997 Materials Research Society, pp. 953-958.
Hiteshew Felisa
LG. Philips LCD Co. Ltd.
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