Mask for crystallizing amorphous

Details Mask for crystallizing amorphous Mask for crystallizing amorphous

2005-04-05

2005-04-05

Niebling, John F. (Department: 2812)

Radiation imagery chemistry: process, composition, or product th

Radiation modifying product or process of making

Radiation mask

C430S004000, C430S269000, C430S311000, C216S012000

Reexamination Certificate

active

06875547

ABSTRACT:
A method of crystallizing amorphous silicon using a mask having a transmitting portion including a plurality of stripes, wherein end lines of at least two stripes are not collinear; and a blocking portion enclosing the plurality of stripes includes the steps of setting the mask over a substrate having an amorphous silicon layer, applying a first laser beam to a first area of the amorphous silicon layer through the mask, thereby forming a first crystallization region, moving the substrate in a first direction, thereby disposing the blocking portion of the mask over the first crystallization region, and applying a second laser beam to the first area of the amorphous silicon layer through the mask, thereby forming a second crystallization region.

REFERENCES:
patent: 6573163 (2003-06-01), Voutsas et al.
patent: 6660576 (2003-12-01), Voutsas et al.
patent: 2001-004129 (2001-01-01), None
patent: WO 9745827 (1997-12-01), None

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