Mask for charged particle beam exposure, and method of...

Details Mask for charged particle beam exposure, and method of... Mask for charged particle beam exposure, and method of...

2007-06-19

2007-06-19

Young, Christopher G. (Department: 1756)

Radiation imagery chemistry: process, composition, or product th

Radiation modifying product or process of making

Radiation mask

C430S296000, C430S942000

Reexamination Certificate

active

10839772

ABSTRACT:
The present invention relates to an SOI substrate as a mask substrate for the charged particle beam exposure of which a silicon oxidized film has a suitable thickness for the fabrication of a mask, a silicon membrane layer has a suitable thickness as a mask membrane and is a low stress membrane having no defects and excellent uniformity and relates to its forming method. The SOI substrate is an SOI wafer which is obtained by forming an oxidized film on a first silicon wafer, forming a separation layer by hydrogen ion implantation into the first silicon wafer via the oxidized film, bonding the first silicon wafer onto a second silicon wafer, and cleaving the first silicon wafer from the second silicon wafer at the separation layer so that a silicon membrane layer is formed on the second silicon layer via the oxidized film. The method of forming the SOI wafer is characterized by comprising a step of causing epitaxial growth of silicon to form a silicon membrane layer on said silicon membrane layer simultaneously with doping either or both of boron and phosphorus.

REFERENCES:
patent: 5357899 (1994-10-01), Bassous et al.
patent: 5466904 (1995-11-01), Pfeiffer et al.
patent: 2725319 (1997-12-01), None
patent: 2829942 (1998-09-01), None
Abstracts of The 46th International Conference on Electron, Ion and Photon Beam Technology and Nanofabrication,p. 401, ′Fabrication of complete 8″ stencil mask for electron projection lithography′, May 28-May 31, 2002.

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