Metal working – Method of mechanical manufacture – Assembling or joining
Patent
1982-02-22
1984-05-22
Osaki, G.
Metal working
Method of mechanical manufacture
Assembling or joining
29576B, 29578, 148187, H01L 2122, H01L 21265
Patent
active
044500211
ABSTRACT:
A unique fabrication method allows the formation of regions of opposite conductivity types in a semiconductor substrate 100 utilizing a single masking step. A first mask is formed on the surface of the semiconductor substrate and patterned to define the regions (110) which are to be doped to a first conductivity type. Subsequent to the doping of these first regions, a protective layer (111) is formed over these first regions. The mask is then removed, thus exposing the regions (112) which are to be doped to the second conductivity type opposite to said first conductivity type. These exposed regions are then doped to said opposite conductivity type, with the first regions which have been doped to said first conductivity type protected by said protective layer.
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Batra Tarsaim L.
Bowden Scott
American Microsystems, Incorporated
Caserza Steven F.
Franklin Richard
MacPherson Alan H.
Osaki G.
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