Mask defect inspecting method, semiconductor device...

Optics: measuring and testing – Inspection of flaws or impurities – Surface condition

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C356S237400

Reexamination Certificate

active

10654527

ABSTRACT:
A mask defect inspecting method comprises preparing detection sensitivities of defects on a plurality of portions of a mask pattern on a photomask, the detection sensitivities being determined according to influences of the defects upon a wafer, and inspecting defects on the plurality of portions based on the detection sensitivities.

REFERENCES:
patent: 4586822 (1986-05-01), Tanimoto
patent: 4623256 (1986-11-01), Ikenaga et al.
patent: 6023328 (2000-02-01), Pierrat
patent: 6038019 (2000-03-01), Chang et al.
patent: 6221539 (2001-04-01), Kotani et al.
patent: 6701004 (2004-03-01), Shykind et al.
patent: 6797526 (2004-09-01), Tanaka et al.
patent: 7218389 (2007-05-01), Uto et al.
patent: 2000-98584 (2000-04-01), None
patent: 2002-100548 (2002-04-01), None
patent: 2002-244275 (2002-08-01), None
Notification of Reasons for Rejection, issued by Japanese Patent Office, mailed Mar. 1, 2005, in Japanese Patent Application No. 2002-260428, and English-language translation thereof.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Mask defect inspecting method, semiconductor device... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Mask defect inspecting method, semiconductor device..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Mask defect inspecting method, semiconductor device... will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-3868972

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.