Mask correction for photolithographic processes

Details Mask correction for photolithographic processes Mask correction for photolithographic processes

2005-08-23

2005-08-23

Mehta, Bhavesh M. (Department: 2625)

Image analysis

Applications

Manufacturing or product inspection

C382S173000, C382S266000, C382S274000, C355S053000, C430S005000, C716S030000

Reexamination Certificate

active

06934410

ABSTRACT:
Local images of photolithographic masks are assigned to classes based on similarity of functions of circuits formed by the images, so that all of the images of a class can be corrected by correcting one of the members. Boundaries of photolithographic masks are corrected for diffusion of light by moving regions based on process light intensity and proximity of close connections. Boundaries are also corrected for shifting of photoactive material in photoresists by calculating the amount of shift based on light intensities at pattern points.

REFERENCES:
patent: 6611953 (2003-08-01), Filseth et al.

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