Mask blank for EUV exposure and mask for EUV exposure

Radiation imagery chemistry: process – composition – or product th – Radiation modifying product or process of making – Radiation mask

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C428S430000

Reexamination Certificate

active

07935460

ABSTRACT:
Provided are a mask for EUV exposure and a mask blank for EUV exposure for manufacturing the same, so as to improve the contrast of ultraviolet inspection light and improve the inspection performance for the mask. This mask blank for EUV exposure includes a substrate, a reflecting layer which is provided on the substrate and reflects EUV light, and an absorbent layer which is provided on the reflecting layer and absorbs EUV light. Reflectance of light at a wavelength between 150 nm and 300 nm is greater at the absorbent layer than that of the reflecting layer. The mask for EUV exposure can be manufactured by processing this mask blank for EUV exposure.

REFERENCES:
patent: 6720118 (2004-04-01), Yan et al.
patent: 7348105 (2008-03-01), Ishibashi et al.
patent: 2006/0292459 (2006-12-01), Kamm et al.
patent: 2007/0160916 (2007-07-01), Ikuta et al.
patent: 2007/0259275 (2007-11-01), Van Herpen et al.
patent: 2004-363570 (2004-12-01), None
patent: 2006-228767 (2006-08-01), None
patent: 2007-86100 (2007-04-01), None
patent: 2007-88414 (2007-04-01), None
patent: 2007-512702 (2007-05-01), None
patent: WO 2005/050719 (2005-06-01), None

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Mask blank for EUV exposure and mask for EUV exposure does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Mask blank for EUV exposure and mask for EUV exposure, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Mask blank for EUV exposure and mask for EUV exposure will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-2674630

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.