Mask and system for mutually aligning objects in ray exposure sy

Details Mask and system for mutually aligning objects in ray exposure sy Mask and system for mutually aligning objects in ray exposure sy

1984-06-29

1985-04-23

Anderson, Bruce C.

Radiant energy

Means to align or position an object relative to a source or...

378 34, G01N 2100, G01N 2300

Patent

active

045132038

ABSTRACT:
For mutually aligning (registering) mask and substrate in X- or corpuscular ray lithography, an electron beam (16) is used which extends collaterally to the exposure beam (ion beam or X-ray) and which is suppressed during the actual exposure process. For coupling the electron beam to the exposure beam path, a magnetic field (7) is used. The accurate relative position of mask and substrate is determined during alignment by tilting the electron beam. Fine alignment during exposure is effected by suitably tilting the ion beam or shifting the substrate relative to the X-ray. The mask (10) used for exposure consists of a very thin silicon layer with a pattern area (M) and a registration area (R) spatially separated therefrom. The registration area consists of a plurality of openings, the pattern area of blind holes.

REFERENCES:
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patent: 4085329 (1978-04-01), McCoy et al.
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patent: 4370554 (1983-01-01), Bohlen et al.
Spears et al., "X-Ray Lithography--A New High Resolution Replication Process", Solid State Technology, Jul. 1972, vol. 15/No. 7, pp. 21-26.
W. R. Livesay, "Computer Controlled Electron-Beam Projection Mask Aligner", Solid State Technology, Jul. 1974, vol. 17/No. 7, pp. 21-26.

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