Mask and method to eliminate side-lobe effects in attenuated pha

Radiation imagery chemistry: process – composition – or product th – Radiation modifying product or process of making – Radiation mask

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G03F 900

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active

059357363

ABSTRACT:
A mask, method of forming the mask, and method of using the mask to form images in a layer of resist layer on an integrated circuit wafer are described. The mask has a first pattern formed in a layer of attenuating phase shifting material. A second pattern formed in a layer of opaque material is formed on the layer of attenuating phase shifting material such that the pattern edges of the first pattern formed in attenuating phase shifting material are exposed, thereby forming a rim type attenuating phase shifting mask. Using this mask to expose a resist layer formed in an integrated circuit wafer achieves the advantages of attenuating phase shifting masks while avoiding problems due to side-lobe effect.

REFERENCES:
patent: 5288569 (1994-02-01), Lin
patent: 5510214 (1996-04-01), Pan et al.
patent: 5593801 (1997-01-01), Yoshioka et al.
patent: 5620817 (1997-04-01), Hsu et al.

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