Mask and method of fabricating the same

Radiation imagery chemistry: process – composition – or product th – Radiation modifying product or process of making – Radiation mask

Reexamination Certificate

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Details

C430S296000

Reexamination Certificate

active

08057965

ABSTRACT:
The invention relates to a mask and a method of fabricating the same. When a mask pattern is formed using E-Beam, the size of the divisional region obtained by a fracturing process can not be formed equally. Therefore, the uniformity of the mask pattern is degraded. In order to form the divisional region to be of equal sizes, the method includes performing a fracturing process by adding a subsidiary pattern to divide a region except for mask pattern, thereby obtaining a mask pattern having excellent uniformity and reducing defects of semiconductor devices.

REFERENCES:
patent: 5439765 (1995-08-01), Nozue
patent: 5585210 (1996-12-01), Lee et al.
patent: 5725969 (1998-03-01), Lee
patent: 6737199 (2004-05-01), Hsieh
patent: 2005/0136340 (2005-06-01), Baselmans et al.
patent: 2000-047363 (2000-02-01), None
patent: 10-2003-0056357 (2003-07-01), None
patent: 10-2006-0079543 (2006-07-01), None

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